Gallium nitride nanotube

[1][2][3] Single crystal gallium nitride nanotubes were first reported to be synthesized by Peidong Yang and his research team at the University of Berkeley's Department of Chemistry on April 10, 2003.

These zinc oxide nanowires were then used as templates over which crystals of gallium nitride were grown by chemical vapour deposition.

[3] Once the gallium nitride crystals formed, heat was then applied to the sapphire wafer to allow vaporization of the zinc oxide nanowire cores.

The rolls are categorized by how the molecular structure bends and use a (n, m) format to determine how the tube was bent into shape.

This spin-dependent band splitting makes GaNNTs a potential candidate for spintronic computing systems.

For the (5,5) armchair and (9,0) nanotubes, other calculated values include the maximum tensile strength was 4.25 and 3.43 eV/Angstrom, the critical strain was 14.6% and 13.3%, and the Poisson ratio was 0.263 and 0.221 respectively.

[4] Gallium nitride (GaN) nanotubes are primarily formed in one of two ways: using a template directed method or vapor- solid (VS) growth.

An analysis using transmission electron microscopy (TEM) shows that ZnO residue, along with a thin film of porous GaN, is still found in the upper portion of the nanotubes after the templates are removed.

This is a result of zinc and oxygen coming off of the template through the porous layer of GaN in the initial stages of forming the nanotube.

Using energy-dispersive x-ray spectroscopy (EDS), it was observed that the nanotubes have a 1:1 ratio of intensity in gallium and nitrogen.

The nanoparticles are then transported to a lower temperature induction furnace where they will collect in groups on a carbon fiber and self- assemble rectangular nanotubes through vapor- solid growth.

[6] M. Jansen et al. has developed a low-cost, fast, and large scale fabrication process for the generation of gallium nitride nanotubes.

[7] The nano ring array was then placed onto the surface of bulk gallium nitride and etched away to produce nanotube structures of equal proportions.

[7] Chu-Ho Lee and his research group at the Seoul National University in Korea were able to synthesize indium doped gallium nitride nanotubes that were fabricated onto silicon substrates.