Hydrogen-terminated silicon surface

atomic force microscope (AFM) has been used to manipulate hydrogen-terminated silicon surfaces.

The infrared spectrum of hydrogen-terminated silicon shows a band near 2090 cm−1, not very different from νSi-H for organic hydrosilanes.

[7] One group proposed to use the material to create digital circuits made of quantum dots by removing hydrogen atoms from the silicon surface.

It serves as a precursor for various surface functionalization techniques and is also essential in the formation of silicon-on-insulator (SOI) wafers.

This process can be monitored using techniques such as X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM).

Idealized view of Si surface before (top) and after (bottom) treatment with HF. Partially oxidized Si is shown in red, bulk Si in blue.
Idealized structure of alkene addition to hydrogen-terminated silicon.