It has the appearance of grey cubic crystals with a melting point of 942 °C.
Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 μm.
InAs is well known for its high electron mobility and narrow energy bandgap.
It is widely used as a terahertz radiation source as it is a strong photo-Dember emitter.
The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to the formation of the quantum dots.