Aluminium gallium arsenide

The chemical formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.

This allows the construction of Bragg mirrors used in VCSELs, RCLEDs, and substrate-transferred crystalline coatings.

Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices.

It is commonly used in GaAs-based red- and near-infra-red-emitting (700–1100 nm) double-hetero-structure laser diodes.

The environment, health and safety aspects of aluminium gallium arsenide sources (such as trimethylgallium and arsine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.