Aluminium indium arsenide

Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a ternary III-V semiconductor compound with very nearly the same lattice constant as InGaAs, but a larger bandgap.

[1] At a composition of approximately x = 0.64, the band gap transitions between direct and indirect.

AlInAs shares the same zincblende crystal structure as AlAs and InAs.

Aluminium indium arsenide is used e.g. as a buffer layer in metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel.

The environment, health and safety aspects of aluminium indium arsenide sources (such as trimethylindium and arsine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.