Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material.
InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers,[1] photodetectors[2] and thermophotovoltaic cells.
[3] InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.
This condensed matter physics-related article is a stub.
You can help Wikipedia by expanding it.