Aluminium arsenide antimonide

Aluminium arsenide antimonide, or AlAsSb (AlAs1-xSbx), is a ternary III-V semiconductor compound.

AlAsSb films have been grown by molecular beam epitaxy and metalorganic chemical vapor deposition[1] on gallium arsenide, gallium antimonide and indium arsenide substrates.

It is typically incorporated into layered heterostructures with other III-V compounds.

AlAsSb shares the same zincblende crystal structure as AlAs and AlSb.

A large discontinuity is introduced into the conduction band minimum by the AlAsSb barrier layer, which restricts the flow of electrons (but not holes) through the photodetector in a manner that reduces the photodetector's dark current and improves its noise characteristics.

Dependence of the direct and indirect band gaps of AlAsSb on composition at room temperature (T = 300 K). [ 2 ]