Gallium arsenide antimonide

[1] This means that intermediate compositions of the alloy below this temperature are thermodynamically unstable and can spontaneously separate into two phases: one GaAs-rich and one GaSb-rich.

This limits the compositions of GaAsSb that can be obtained by near-equilibrium growth techniques, such as LPE, to those outside of the miscibility gap.

[2] However, compositions of GaAsSb within the miscibility gap can be obtained with non-equilibrium growth techniques, such as MBE and MOVPE.

For example, this makes it possible to grow GaAsSb with the composition GaAs0.51Sb0.49, which, while normally within the miscibility gap at typical growth temperatures, can exist as a kinetically stable alloy.

[6] A GaAsSb/GaAs-based heterostructure was used to make a near-infrared photodiode with peak responsivity centered at 1.3 μm.