[4] A shaper (also referred to as a die) having dimensions approximately equal to the crystal to be grown rests above the surface of the melt which is contained in a crucible.

[5] Because of the growth angle, varying the height of the meniscus (i.e. the thickness of the liquid film) will change the dimensions of the crystal.

The micro-pulling-down or μ-PD technique uses a small round opening in the bottom of the crucible to pull a crystalline fiber downward.

A variation called pendant drop growth or PDG uses a slot in the bottom of the crucible to produce crystalline sheets in a similar manner.

Czochralski growth using a floating shaper known as a "coracle" was done for some III-V semiconductors prior to the development of advanced control-systems for diameter control.

[12] The string ribbon method, also known as dendritic web or edge-supported pulling, has been used to grow semiconductor sheets including indium antimonide, gallium arsenide, germanium, and silicon.

[13] A seed crystal with the width and thickness matching the sheet to be grown is dipped into the top surface of the melt.

Strings of a suitable material are fixed to the vertical edges of the seed and extend down through holes in the bottom of the crucible to a spool.