The exfoliated layers have potential applications in ultrathin field-effect transistors.

[2] Millimeter-long crystalline whiskers of TiS3 can be grown by chemical vapor transport at ca.

[1][2] TiS3 is an n-type semiconductor with an indirect bandgap of about 1 eV.

[2] Its individual layers are made of TiS atomic chains; hence they are anisotropic and their properties depend on the in-plane orientation.

For example, in the same sample, electron mobility can be 80 cm2/(V·s) along the b-axis and 40 cm2/(V·s) along the a-axis.