Cd3As2 dissociates between 220 and 280 °C according to the reaction[4] An energy barrier was found for the nonstoichiometric vaporization of arsenic due to the irregularity of the partial pressures with temperature.

This transition results in a change in the fourfold axis of the tetragonal cell, causing crystal twinning.

[8] In 2014 Cd3As2 was shown to be a semimetal material analogous to graphene that exists in a 3D form that should be much easier to shape into electronic devices.

Moreover, a TDS can potentially be driven into other exotic phases (such as Weyl semimetals, axion insulators and topological superconductors), Angle-resolved photoemission spectroscopy revealed a pair of 3D Dirac fermions in Cd3As2.

[11] Cadmium Arsenide shows very strong quantum oscillations in resistance even at the relatively high temperature of 100K.

[12] This makes it useful for testing cryomagnetic systems as the presence of such a strong signal is a clear indicator of function.

The vacant tetrahedral sites provoked research by von Stackelberg and Paulus (1935), who determined the primary structure.

[14] Cadmium arsenide is used in infrared detectors using the Nernst effect, and in thin-film dynamic pressure sensors.