[1] The LADA technique targets a variable power continuous wave (CW) laser at specific device transistors.
This allows the laser to generate photo carriers in the silicon without resulting in localized heating of the device.
The creation of this photocurrent alters the transistor operating parameters, which may be observed as a change in function of the device.
This makes LADA a suitable technique for determining critical timing paths within a semiconductor circuit.
LADA has been used to analyze failures in domino logic, state elements in memories and leakage.