Silicon on insulator

[6][additional citation(s) needed] FD-SOI (Fully Depleted Silicon On Insulator) has been seen as a potential low cost alternative to FinFETs.

are reduced in FDSOI since the source and drain electric fields can't interfere due to the BOX.

[22] The 90 nm PowerPC- and Power ISA-based processors used in the Xbox 360, PlayStation 3, and Wii use SOI technology as well.

In January 2005, Intel researchers reported on an experimental single-chip silicon rib waveguide Raman laser built using SOI.

[25] In 1990, Peregrine Semiconductor began development of an SOI process technology utilizing a standard 0.5 μm CMOS node and an enhanced sapphire substrate.

Multiple other companies have also applied SOI technology to successful RF applications in smartphones and cellular radios.

The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection.

The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica[28] The major disadvantage of SOI technology when compared to conventional semiconductor industry is increased cost of manufacturing.

[29] As of 2012 only IBM and AMD used SOI as basis for high-performance processors and the other manufacturers (Intel, TSMC, Global Foundries etc.)