Power electronic substrate

A related technique uses a seed layer, photoimaging, and then additional copper plating to allow for fine lines (as small as 50 micrometres) and through-vias to connect front and back sides.

This can be combined with polymer-based circuits to create high density substrates that eliminate the need for direct connection of power devices to heat sinks.

[2] One of the main advantages of the DBC vs other power electronic substrates is their low coefficient of thermal expansion, which is close to that of silicon (compared to pure copper).

Although AMB is electrically very similar to DBC, it is typically suited for small production lots due to the unique process requirements.

The FR-4-based dielectric is usually thin (about 100 μm) because it has poor thermal conductivity compared to the ceramics used in DBC substrates.