,[3] was first theoretically introduced by Serge Luryi (1988),[1] and is defined as the variation of electrical charge
[3] In the simplest example, if you make a parallel-plate capacitor where one or both of the plates has a low density of states, then the capacitance is not given by the normal formula for parallel-plate capacitors,
Quantum capacitance is especially important for low-density-of-states systems, such as a 2-dimensional electronic system in a semiconductor surface or interface or graphene, and can be used to construct an experimental energy functional of electron density.
[3] When a voltmeter is used to measure an electronic device, it does not quite measure the pure electric potential (also called Galvani potential).
Instead, it measures the electrochemical potential, also called "fermi level difference", which is the total free energy difference per electron, including not only its electric potential energy but also all other forces and influences on the electron (such as the kinetic energy in its wavefunction).
For example, a p-n junction in equilibrium, there is a galvani potential (built-in potential) across the junction, but the "voltage" across it is zero (in the sense that a voltmeter would measure zero voltage).
As explained above, we can divide the voltage into two pieces: The galvani potential, and everything else.
In a traditional metal-insulator-metal capacitor, the galvani potential is the only relevant contribution.
Therefore, the capacitance can be calculated in a straightforward way using Gauss's law.
However, if one or both of the capacitor plates is a semiconductor, then galvani potential is not necessarily the only important contribution to capacitance.
As the capacitor charge increases, the negative plate fills up with electrons, which occupy higher-energy states in the band structure, while the positive plate loses electrons, leaving behind electrons with lower-energy states in the band structure.
Therefore, as the capacitor charges or discharges, the voltage changes at a different rate than the galvani potential difference.
In these situations, one cannot calculate capacitance merely by looking at the overall geometry and using Gauss's law.
One must also take into account the band-filling / band-emptying effect, related to the density-of-states of the plates.
[2] The ideas behind quantum capacitance are closely linked to Thomas–Fermi screening and band bending.
Take a capacitor where one side is a metal with essentially-infinite density of states.
The other side is the low density-of-states material, e.g. a 2DEG, with density of states
Additionally, the internal chemical potential of electrons in the 2DEG changes by
The total voltage change is the sum of these two contributions.
is the valley degeneracy factor, and m* is effective mass.
[5] In modeling and analyzing dye-sensitized solar cells, the quantum capacitance of the sintered TiO2 nanoparticle electrode is an important effect, as described in the work of Juan Bisquert.
[2][6][7] Luryi proposed a variety of devices using 2DEGs, which only work because of the low 2DEG density-of-states, and its associated quantum capacitance effect.
[1] For example, in the three-plate configuration metal-insulator-2DEG-insulator-metal, the quantum capacitance effect means that the two capacitors interact with each other.
Quantum capacitance can be relevant in capacitance–voltage profiling.
When supercapacitors are analyzed in detail, quantum capacitance plays an important role.