Silicon nanotube

[1] The conventional vapor-liquid-solid (VLS) and solid-liquid-solid (SLS) mechanisms are favorite techniques to grow one-dimensional silicon nanostructures.

Using these modified VLS and SLS techniques, multiwall silicon nanotubes with a sidewall thickness of few nanometers have been grown.

[7] As a result of their ballistic conductivity, silicon nanotubes and nanowires have been considered for use in electronics, e.g. in thermoelectric generators.

[8] Since the structure can accommodate molecules of hydrogen so it might resemble coal without the CO2, it appears that silicon nanomaterials may behave like a metal fuel.

Since silicon is an indirect band gap semiconductor, the quantum yield of radiative recombination in this material is very low.

Si nanotube (top) created by partial etching of Si-covered ZnO nanowire (bottom). [ 1 ]
Si nanotubes created by etching of Si-covered ZnO nanowires.
Si nanotubes produced using a carbon template. Clockwise: carbon fiber; carbon fiber coated with silicon; silicon oxide tube remaining after removing the carbon core; covering the silicon oxide with poly-crystalline silicon. Scale bars 200 nm